Abstract-Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector

 N. Dyakonova,  D. Coquillat,   D. But,  C. Consejo, F. Teppe, W. Knap,  L. Varani,  S. Blin,  V. Nodjiadjim,   A. Konczy,

http://ieeexplore.ieee.org/document/7986010/


We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10−10 W/Hz1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power.