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Saturday, July 9, 2016
Abstract-Uncooled CMOS terahertz imager using a metamaterial absorber and pn diode
Uncooled CMOS terahertz imager using a metamaterial absorber and pn diode
Ivonne Escorcia, James Grant, John Gough, and David R. S. Cumming
We demonstrate a low-cost uncooled terahertz (THz) imager fabricated in a standard 180 nm CMOS process. The imager is composed of a broadband THz metamaterial absorber coupled with a diode microbolometer sensor where the pn junction is used as a temperature sensitive device. The metamaterial absorber array is integrated in the top metallic layers of a six metal layer process allowing for complete monolithic integration of the metamaterial absorber and sensor. We demonstrate the capability of the detector for stand-off imaging applications by using it to form transmission and reflection images of a metallic object hidden in a manila envelope.