Tuesday, June 28, 2016
Abstract-Terahertz imaging of Landau levels in HgTe-based topological insulators
We report on sub-terahertz under the of a two dimensional topological based on HgTe We perform a detailed visualization of by means of at different gate voltages. This technique allows one to determine a critical corresponding to topological phase transition from inverted to normal even in almost gapless samples. The comparison with realistic calculations of reveals a smaller role of bulk inversion asymmetry in HgTe than it was assumed previously.