Thursday, April 21, 2016

Abstract-Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers

1 TU Wien, Institude of Solid State Electronics, Floragasse 7, 1040 Wien, Austria2 Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Wien, Austria3 TU Wien, Center for Micro and Nano Structures, Floragasse 7, 1040 Wien, Austria
* Author to whom correspondence should be addressed.
Received: 31 March 2016 / Revised: 14 April 2016 / Accepted: 15 April 2016 / Published: 20 April 2016
(This article belongs to the Special Issue Quantum Cascade Lasers - Advances and New Applications)
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This work provides a detailed study on the growth of AlxIn1-xAsySb1-y lattice-matched to InAs by Molecular Beam Epitaxy. In order to find the conditions which lead to high crystal quality deep within the miscibility gap, AlxIn1-xAsySb1-y with x = 0.462 was grown at different growth temperatures as well as As2 and Sb2 beam equivalent pressures. The crystal quality of the grown layers was examined by high-resolution X-ray diffraction and atomic force microscopy. It was found that the incorporation of Sb into Al0.462In0.538AsySb1-y is strongly temperature-dependent and reduced growth temperatures are necessary in order to achieve significant Sb mole fractions in the grown layers. At 480  lattice matching to InAs could not be achieved. At 410  lattice matching was possible and high quality films of Al0.462In0.538AsySb1-y were obtained.

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