Tuesday, January 12, 2016
Abstract-InAs based terahertz quantum cascade lasers
We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAsSb Due to the lower effective electron mass, based active regions are expected to provide a higher optical gain compared to structures consisting of or InGaAs. The growth by enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of based active regions for terahertz potentially enabling higher operating temperatures.