Tuesday, September 29, 2015
Abstract-Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide
We report on room temperature detection of terahertz radiation by means of antenna-coupled fabricated using on The achieved photoresponsivity (∼0.25 V/W) and noise equivalent power (∼80 nW/) result from the combined effect of two independent detection mechanisms: over-damped rectification and thermoelectric effects, the latter ascribed to the presence of junctions along the channel. The calculated and thermoelectric response reproduces qualitatively well the measured photovoltages; the experimentally observed sign-switch demonstrates the stronger contribution of detection compared to the thermoelectric one. These results unveil the potential of detectors exploiting on for fast large area imaging of macroscopic samples.