A repository & source of cutting edge news about emerging terahertz technology, it's commercialization & innovations in THz devices, quality & process control, medical diagnostics, security, astronomy, communications, applications in graphene, metamaterials, CMOS, compressive sensing, 3d printing, and the Internet of Nanothings. NOTHING POSTED IS INVESTMENT ADVICE! REPOSTED COPYRIGHT IS FOR EDUCATIONAL USE.
Tuesday, May 12, 2015
Abstract-Optimizing third-harmonic generation at terahertz frequencies in graphene
Ibraheem Al-Naib, Max Poschmann, and Marc M. Dignam
We model third-harmonic generation in doped monolayer graphene at terahertz frequencies by employing a nearest-neighbor tight-binding model in the length gauge. We show that for a given incident-field amplitude there is an optimum Fermi level that maximizes the emitted third-harmonic field. The optimum Fermi level depends very strongly on the incident-field amplitude as well as on the scattering time and increasing either enhances the third-harmonic response. We consider the general case of Fermi-level-independent scattering as well as three different scattering mechanisms that are Fermi-level dependent: phonon, long-range impurity, and short-range impurity scattering. For each case, we determine the optimal Fermi level as well as the amplitude of the optimized third-harmonic response for single-cycle incident fields with central frequencies of 1 THz and amplitudes in the range of 25–75 kV/cm. We find that although nonlinear processes beyond third order suppress third-harmonic generation, we still obtain third-harmonic amplitudes as large as 1.6% of the fundamental of the transmitted field.