Abstract-Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation

1. Ilya Prudaev^1,*, 
2. Sergey Sarkisov^1,*, 
3. Oleg Tolbanov¹ and
4. Alexey Kosobutsky^1,2

DOI: 10.1002/pssb.201451497

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451497/abstract

In this paper the results of experiments on terahertz generation from nitride light-emitting diode heterostructures under two-photon excitation by femtosecond laser pulses are reported. Dependencies of the photoluminescence and terahertz spectra on structural properties of the samples and intensity of laser pulses have been studied. It was found that the terahertz pulse amplitude increases and its spectrum shifts towards higher frequencies with an increasing number of quantum wells in the heterostructures. Photoluminescence spectral shape change at high excitation intensities was observed. The probable mechanisms explaining the observed experimental dependencies are discussed.