Abstract-Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

M. Beeler^1,2, C. Bougerol^1,3, E. Bellet-Amalric^1,2 and E. Monroy^1,2

1 Université Grenoble Alpes, 38000 Grenoble, France
2 CEA-Grenoble, INAC/SP2M/NPSC, 17 avenue des Martyrs, 38054 Grenoble, France
3 Institut Néel-CNRS, 25 avenue des Martyrs, 38042 Grenoble Cedex 9, France
Appl. Phys. Lett. 105, 131106 (2014); http://dx.doi.org/10.1063/1.4896768

http://scitation.aip.org/content/aip/journal/apl/105/13/10.1063/1.4896768

THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase inpolarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures