Friday, July 4, 2014

Patent application title: APPARATUS FOR GENERATING/DETECTING TERAHERTZ WAVE USING GRAPHENE AND MANUFACTURING METHOD OF THE SAME

Inventors:
Assignees:  Electronics and Telecommunications Research Institute
IPC8 Class: AH01L3334FI
USPC Class: 257 9
Class name: Active solid-state devices (e.g., transistors, solid-state diodes) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
Publication date: 2014-07-03
Patent application number: 20140183441



Read more: http://www.faqs.org/patents/app/20140183441#ixzz36VhKb7ZC

Abstract:

Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.

Claims:

1. A terahertz wave generating/detecting apparatus comprising: a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer of the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate of the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the lower metal layer.

2. The terahertz wave generating/detecting apparatus of claim 1, wherein the upper metal layers are spaced apart from each other in a second direction crossing the first direction.

3. The terahertz wave generating/detecting apparatus of claim 2, further comprising a dielectric layer disposed on the graphene layer between the upper metal layers.

4. The terahertz wave generating/detecting apparatus of claim 3, wherein the dielectric layer comprises a polymer.

5. The terahertz wave generating/detecting apparatus of claim 4, wherein the polymer comprises benzocyclobutene (BCB).

6. The terahertz wave generating/detecting apparatus of claim 1, further comprising an interlayer dielectric between the lower metal layer and upper metal layers on the transmitting region.

7. The terahertz wave generating/detecting apparatus of claim 6, wherein the interlayer dielectric surrounds the lower metal layer on the active region of the substrate and has the same level as the graphene layer.

8. The terahertz wave generating/detecting apparatus of claim 1, wherein the graphene layer has a width line greater than that of the lower metal layer.

9. The terahertz wave generating/detecting apparatus of claim 1, wherein the lower metal layer comprises nickel (Ni), copper (Cu), or platinum (Pt).

10. The terahertz wave generating/detecting apparatus of claim 1, further comprising a transmitting antenna connected to the lower metal layer and the upper metal layers on the transmitting region.

11. The terahertz wave generating/detecting apparatus of claim 10, wherein the substrate has a reception region which is defined in the other side of the active region facing the transmitting region.

12. The terahertz wave generating/detecting apparatus of claim 11, wherein the lower metal layer and the upper metal layers extend to the reception region.

13. The terahertz wave generating/detecting apparatus of claim 12, further comprising a receiving antenna connected to the lower metal layer and upper metal layers on the reception region.

14. The terahertz wave generating/detecting apparatus of claim 1, further comprising a bias input terminal to which a bias voltage is applied to generate or amplify the terahertz wave, the bias input terminal being disposed between the lower metal layer and the upper metal layers.

15. A method for manufacturing a terahertz wave generating/detecting apparatus, the method comprising: forming a lower metal layer on an active region and a transmitting region of a substrate; forming a graphene layer on the lower metal layer of the active region; forming the graphene layer and the lower metal layer with a predetermined line width in a first direction; forming an interlayer dielectric around the graphene layer of the active region and on the lower metal layer of the transmitting region; and forming a plurality of upper metal layers extending in the first direction on the graphene layer and the interlayer dielectric on the transmitting region, wherein the plurality of upper layers are spaced apart from each other in a second direction crossing the first direction.

16. The method of claim 15, further comprising etching the lower metal layer with a line width less than that of the graphene layer.

17. The method of claim 16, wherein the etching of the lower metal layer comprises a wet etching method.

18. The method of claim 17, wherein the wet etching method for the lower metal layer is performed by using hydrofluoric acid, nitric acid, or hydrochloric acid.

19. The method of claim 15, further comprising forming a dielectric layer between the upper metal layers on the graphene layer.

20. The method of claim 19, wherein the dielectric layer comprises a polymer formed by using an inkjet printing method or a screen process method.

Description:



Read more: http://www.faqs.org/patents/app/20140183441#ixzz36VhkGrw1

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