Abstract-Ultrafast carrier response of Br+-irradiated In0.53Ga0.47As excited at telecommunication wavelengths

L. Fekete¹, H. Němec¹, Z. Mics¹, F. Kadlec¹, P. Kužel^1,a), V. Novák², J. Lorinčík^3,4, M. Martin⁵, J. Mangeney⁵, J. C. Delagnes⁶ and P. Mounaix⁶
^{http://scitation.aip.org/content/aip/journal/jap/111/9/10.1063/1.4709441}

1 Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague 8, Czech Republic
2 Institute of Physics ASCR, Cukrovarnická 10, 162 53 Prague 6, Czech Republic
3 Institute of Photonics and Electronics ASCR, Chaberská 57, 18251 Prague 8, Czech Republic
4 Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske mladeze 8, 40096, Usti nad Labem, Czech Republic
5 Institut d’Electronique Fondamentale, Université Paris XI, UMR CNRS 8622, 91405 Orsay Cedex, France
6 Laboratoire Ondes et Matière d’Aquitaine, Université Bordeaux I, UMR CNRS 5798, 351 Cours de la Libération, 33405 Talence Cedex, France
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a) E-mail: kuzelp@fzu.cz.
J. Appl. Phys. 111, 093721 (2012); http://dx.doi.org/10.1063/1.4709441

We present results of infrared pump—terahertz probe experiments applied to a set of In_0.53Ga_0.47As films irradiated with heavy ions (Br⁺) at doses from 10⁹ to 10¹²cm⁻².Photoexcitation at 1400 nm (0.89 eV) allowed us to characterize the response close to telecommunications’ wavelengths whilst avoiding the intervalley carrier scattering observed when a shorter wavelength excitation is used. The excitation fluence was varied in our experiments in order to characterize the dynamics in detail: the lifetimes and mobilities of both electrons and holes were retrieved, and the trap filling and carrier diffusion were clearly observed. The In_0.53Ga_0.47As film irradiated by the dose of 10¹²cm⁻² exhibits simultaneously ultrashort electronlifetime (∼300 fs) and very high electron mobility (2800 cm²V⁻¹s⁻¹). These findings are particularly important for the design of terahertz emitters controlled by lasers operating at standard telecommunication wavelengths.