Abstract-Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Hunter Banks, Ben Zaks, Fan Yang, Shawn Mack, Arthur C. Gossard, Renbao Liu, Mark S. Sherwin

http://arxiv.org/abs/1309.3264

Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_= 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_=f_+2n f_$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_} = 36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_