Abstract-Terahertz detection in zero-bias InAs self-switching diodes at room temperature

 

Andreas Westlund¹, Paul Sangaré², Guillaume Ducournau², Per-Åke Nilsson¹, Christophe Gaquière², Ludovic Desplanque², Xavier Wallart², and Jan Grahn¹

¹Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
²Institute of Electronics, Microelectronics and Nanotechnology UMR CNRS 8520, University of Lille, CS 60069, 59652 Villeneuve d'Ascq, France
http://apl.aip.org/resource/1/applab/v103/i13/p133504_s1?isAuthorized=no

 

RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/Hz^½ was observed for the SSD when driven by a 50 Ω source. With a conjugately matched source, a responsivity of 34 V/W and an NEP of 65 pW/Hz^½ were estimated. An antenna-coupled SSD demonstrated a responsivity of 0.7 V/W at 600 GHz. The results demonstrate the feasibility of zero-bias terahertz detection with high-electron mobility InAs SSDs up to and beyond 100 GHz.

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