Imaging,
radar, spectroscopy, and communications systems operating in the millimeter
wave sub-MMW frequency bands have been elusive due to a lack of effective means
to generate, detect, process, and radiate the necessary high frequency signals.
In order to control and manipulate radiation in this especially challenging
portion of the RF spectrum, electronics must be developed that can operated at
frequencies past 1 THz.
The
sub millimeter wave (sub-MMW) frequency band begins at frequencies above 300
GHz where the wavelengths become less than 1 mm. Until recently, active
electronics using solid-state technologies were unable to access sub-MMW
frequencies directly due to insufficient transistor performance. The compromise
electronic option was to use frequency conversion to multiply circuit operating
frequencies up from millimeter wave frequencies. Such an approach limited the
output power level of the devices and the achievable signal-to-noise ratio. It
also restricted the devices to relatively large sizes in terms of footprint and
weight. These limitations and restrictions prevented widespread implementation
and the subsequent exploitation of the sub-MMW frequency band. The enabling
technology necessary to exploit the sub-MMW band is monolithic microwave
integrated circuits (MMICs) that will operate up to THz frequencies. These THz
MMICs or TMICs, require THz transistors with maximum oscillation frequencies
(fmax) well above 1 THz.
The
objective of the Terahertz (THz) Electronics program is to develop the critical
device and integration technologies necessary to realize compact,
high-performance electronic circuits that operate at center frequencies
exceeding 1.0 THz. The program will focus on the developments of two critical
THz technical areas.
Terahertz
Transistor Electronics. The program will aggressively develop multi-THz InP HBT
and InP HEMT transistor technologies to enable TMICs. In addition, THz low-loss
inter-element interconnect and integration technologies will also be developed
to build compact THz transmitter and receiver modules.
Terahertz
High Power Amplifier Modules. Compact, micromachined vacuum electronics devices
will be developed to produce a significant increase of output power at
frequencies beyond 1.0 THz and to radiate this energy at an antenna.
The success of the THz Electronics program will lead
to revolutionary applications by enabling coherent THz processing techniques
such as THz imaging systems, sub-MMW, ultra-wideband, ultra-high-capacity
communication links and sub-MMW, single-chip widely-tunable synthesizers for
explosive detection spectroscopy. The program manager is Dr. John Albrecht
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