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Monday, October 3, 2011
Sandia National Laboratories Develops Direct Detector for Terahertz Radiation
http://techportal.eere.energy.gov/techpdfs/Detector%20for%20Terahertz%20Radiation2011-6929P.pdf
TECHNOLOGY SUMMARY
There has been much interest expressed in terahertz technology due to
the diverse range of applications that it applies to. However, the
terahertz components have been known to perform poorly due to it lying
between traditional electronic and photonic fields. Sandia National
Laboratories has created a direct detector for terahertz radiation that
seeks to close the “technological gap”.
The present invention is a direct detector that is a depletion mode fieldeffect
transistor built from heterostructures and consisting of electrical
contacts and a grating-gate. The grating gate tunes the electron density
of the detector and adjusts the Plasmon frequency to match the THz
radiation illuminating the device. The detector shows a photoresponse
when the Plasmon frequency under the grating gate was turned to the
frequency of the incident illumination, a capability not found in other
terahertz devices.
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