Abstract-Investigating Glow Discharge Detectors as a Millimeter-Wave/Terahertz Radiation Detection Tool

• N. Alasgarzade, M. A. Nebioğlu, T. Takan, I. U. Uzun-Kaymak, A. B. Sahin, H. Altan

https://link.springer.com/chapter/10.1007/978-94-024-1093-8_21

Compared to other forms of electromagnetic radiation, Terahertz (THz) radiation is considered safe for imaging and detection purposes due to their non-invasive and non-destructive nature. Novel techniques and methods are constantly being evaluated for efficient detection and measurements of THz waves, yet their commercial success is limited due to cost and overall complexity of these systems. Commercially available Glow Discharge Detectors (GDDs) are proven to detect microwave and higher frequency radiation. Although, the plasma generated inside the GDDs enables the detection of the EM radiation, the interaction mechanism is not fully understood. In this study, we investigate various types of GDDs that are commercially available, and characterize their overall behaviour in response to both CW and modulated EM radiation. In addition, the response from various GDDs to the mm-wave/THz radiation are surveyed for the range of 260–380 GHz. Measurements show that response signal at certain frequencies within the range are attenuated suggesting a resonance frequency possibly based on the electrode structure.

Abstract-Silicon junctionless field effect transistors as room temperature terahertz detectors

J. Marczewski^1,a), W. Knap^2,3, D. Tomaszewski¹, M. Zaborowski¹ and P. Zagrajek⁴
 HIDE AFFILIATIONS
1 Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw, Poland
2 Institute of High Pressure Physics of the Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
3 Laboratory Charles Coulomb, Montpellier University & CNRS, Place E. Bataillon, Montpellier 34095, France
4 Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw, Poland
a) Author to whom correspondence should be addressed. Electronic mail: jmarcz@ite.waw.pl
J. Appl. Phys. 118, 104502 (2015); http://dx.doi.org/10.1063/1.4929967
http://scitation.aip.org/content/aip/journal/jap/118/10/10.1063/1.4929967

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventionalMOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.