Showing posts with label S. S. Dhillon. Show all posts
Showing posts with label S. S. Dhillon. Show all posts

Friday, May 15, 2020

Abstract-Cavity-based photoconductive sources for real-time terahertz imaging


J. Hawecker, V. Pistore, A. Minasyan, K. Maussang, J. Palomo, I. Sagnes, J.-M. Manceau, R. Colombelli, J. Tignon, J. Mangeney, and S. S. Dhillon


(a) Optical image (front) of the object. (b) Optical image (back of object) of hidden text. (c) Real-time image from the THz camera using the high average power from the quasi-cavity PC switch showing the hidden text. 
https://www.osapublishing.org/prj/abstract.cfm?uri=prj-8-6-858

Optically driven photoconductive switches are one of the predominant sources currently used in terahertz imaging systems. However, owing to their low average powers, only raster-based images can be taken, resulting in slow acquisition. In this work, we show that by placing a photoconductive switch within a cavity, we are able to generate absolute average THz powers of 181 μW with the frequency of the THz emission centered at 1.5 THz—specifications ideally adapted to applications such as non-destructive imaging. The cavity is based on a metal–insulator–metal structure that permits an enhancement of the average power by almost 1 order of magnitude compared to a standard structure, while conserving a broadband spectral response. We demonstrate proof-of-principle real-time imaging using this source, with the broadband spectrum permitting to eliminate strong diffraction artifacts.
© 2020 Chinese Laser Press

Thursday, January 28, 2016

Abstract-Engineered far-fields of metal-metal terahertz quantum cascade lasers with integrated planar horn structures


F. Wang, I. Kundu, L. Chen, L. Li, E. H. Linfield, A. G. Davies, S. Moumdji, R. Colombelli, J. Mangeney, J. Tignon, and S. S. Dhillon

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-3-2174

The far-field emission profile of terahertz quantum cascade lasers (QCLs) in metal-metal waveguides is controlled in directionality and form through planar horn-type shape structures, whilst conserving a broad spectral response. The structures produce a gradual change in the high modal confinement of the waveguides and permit an improved far-field emission profile and resulting in a four-fold increase in the emitted output power. The two-dimensional far-field patterns are measured at 77 K and are agreement in with 3D modal simulations. The influence of parasitic high-order transverse modes is shown to be controlled by engineering the horn structure (ridge and horn widths), allowing only the fundamental mode to be coupled out.
© 2016 Optical Society of America
Full Article  |  PDF Article

Monday, October 20, 2014

Abstract-20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas





P. J. Hale, J. Madeo, C. Chin, S. S. Dhillon, J. Mangeney, J. Tignon, and K. M. Dani  »View Author Affiliations
http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-21-26358
Optics Express, Vol. 22, Issue 21, pp. 26358-26364 (2014)
http://dx.doi.org/10.1364/OE.22.026358

We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data.
© 2014 Optical Society of America