Showing posts with label S. G. García. Show all posts
Showing posts with label S. G. García. Show all posts

Thursday, September 3, 2015

Abstract-Time-domain numerical modeling of terahertz receivers based on photoconductive antennas


E. Moreno, Z. Hemmat, J. B. Roldán, M. F. Pantoja, A. R. Bretones, and S. G. García
https://www.osapublishing.org/josab/abstract.cfm?uri=josab-32-10-2034

We present here a simulator that solves the main semiconductor charge and transport equations coupled to Maxwell equations to study receivers based on photoconductive antennas (R-PCAs). Making use of this tool we were able to correctly characterize the operation of these antennas. In doing so, we compared simulations with the results of the semi-empirical expression 𝐼THz(𝑡)𝜎𝑐(𝑡)*𝐸THz(𝑡) employed to evaluate the detected photocurrent by means of the convolution between the photoconductivity in the receiver and the electric field linked to the emitter antenna. We were able to accurately reproduce experimental data with our simulation tool. These kinds of tools are essential to model photoconductive antennas, a fundamental step needed for the development of terahertz time-domain spectroscopy applications based on PCAs.
© 2015 Optical Society of America
Full Article  |  PDF Article

Tuesday, April 15, 2014

Abstract-On the Numerical Modeling of Terahertz Photoconductive Antennas


E. Moreno, M. F. Pantoja, F. G. Ruiz, J. B. Roldán, S. G. García

http://link.springer.com/article/10.1007%2Fs10762-014-0060-5

This paper shows the relevance of mobility models to describe the carrier dynamics for the analysis of radiative semiconductor photoconductive devices in the terahertz regime. We have built a simulator that self-consistently solves the device physics and Maxwell’s equations to study the radiated fields. In particular, we show a significant influence of an accurate description of the steady-state regime of the semiconductor device for calculating radiated electromagnetic fields in the broadside direction. Comparison with measurements shows the accuracy of our simulator and demonstrates the superior performance of numerical schemes based not only on the description of the carrier, electric potential, and field distributions, but also on reliable local mobility models.

Saturday, April 5, 2014

Abstract-On the Numerical Modeling of Terahertz Photoconductive Antennas


This paper shows the relevance of mobility models to describe the carrier dynamics for the analysis of radiative semiconductor photoconductive devices in the terahertz regime. We have built a simulator that self-consistently solves the device physics and Maxwell’s equations to study the radiated fields. In particular, we show a significant influence of an accurate description of the steady-state regime of the semiconductor device for calculating radiated electromagnetic fields in the broadside direction. Comparison with measurements shows the accuracy of our simulator and demonstrates the superior performance of numerical schemes based not only on the description of the carrier, electric potential, and field distributions, but also on reliable local mobility models.