Abstract-Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption

Leimeng Sun, Minmin Zhu, Chun Zhao, Peiyi Song, Yurong Wang, Dongyang Xiao, Huafeng Liu, Siu HonTsang, Edwin HangTong Teo, Fangjing Hu, Liangcheng Tu,

https://www.sciencedirect.com/science/article/pii/S0008622319307985

Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The effects of VACNT parameters on the absorption performance are investigated within the THz and infrared spectra using the Maxwell-Garnett theory, revealing that the absorption in the THz range can be greatly enhanced by suitable selections of the length, volume fraction and vertical misalignment of CNTs. A VACNT array with an average CNT length of $\sim$600 μm is fabricated on a 4-inch silicon substrate. Experimental results measured by a THz time-domain spectroscopic system show an average power absorptance of $\sim$98% from 0.3 to 2.5 THz, and agree well with the numerical modelling. This device can be used as a cost-effective near-perfect absorber across the THz and infrared regions for thermal emission and imaging, electromagnetic interference shielding, stealth and energy harvesting applications.

Abstract-An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon

Huafeng Liu, Kai Luo,  Shihao Tang,  Danhua Peng, Fangjing Hu,  Liangcheng Tu

https://www.mdpi.com/1996-1944/11/12/2590

Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a silicon cross resonator with an internal cross-shaped air cavity. Numerical results suggest that the proposed absorber can operate from THz to far-infrared regimes, having an average power absorption of ∼95% between 0.6 and 10 THz. Experimental results using THz time-domain spectroscopy show a good agreement with simulations. The underlying mechanisms for broadband absorption are attributed to the combined effects of multiple cavities modes formed by silicon resonators and bulk absorption in the doped silicon substrate, as confirmed by simulated field patterns and calculated diffraction efficiency. This ultra-wideband absorption is polarization insensitive and can operate across a wide range of the incident angle. The proposed absorber can be readily integrated into silicon-based photonic platforms and used for sensing, imaging, energy harvesting and wireless communications applications in the THz/IR range

Abstract-Ultra-wideband THz/IR Metamaterial Absorber based on Doped Silicon

Huafeng Liu, Kai Luo, Danhua Peng, Fangjing Hu, Liangcheng Tu

https://arxiv.org/abs/1809.09400

Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a silicon cross resonator with an internal cross-shaped air cavity. Numerical results suggest that the proposed absorber can operate from THz to mid-infrared, having an average power absorption of >95% between 0.6 and 10 THz. Experimental results using THz time-domain spectroscopy show a good agreement with simulations. The underlying mechanisms for broadband absorptions are attributed to the combined effects of multiple cavities modes formed by silicon resonators and bulk absorption in the substrate, as confirmed by simulated field patterns. This ultra-wideband absorption is polarization insensitive and can operate across a wide range of the incident angle. The proposed absorber can be readily integrated into silicon-based platforms and is expected to be used in sensing, imaging, energy harvesting and wireless communications systems.