Abstract-Giant field enhancements in ultrathin nanoslots above 1 terahertz

Dasom Kim, Jeeyoon Jeong, Geunchang Choi, Young-Mi Bahk, Taehee Kang, Dukhyung Lee, Bidhek Thusa, Dai-Sik Kim,

https://pubs.acs.org/doi/abs/10.1021/acsphotonics.8b00151?journalCode=apchd5

Strong demand for plasmonic devices with an enormously enhanced electric field and desired resonance frequencies has led to extensive investigations of metallic slot structures. While strong field enhancement can be achieved by reducing the width of the slot, the effect of the gap surface plasmon limits the maximum achievable field enhancement at higher frequencies. Specifically, the effect of the gap surface plasmon becomes stronger as the gap width decreases and strongly suppresses the transmission while causing a red-shift of the resonance. Here, we overcome these issues and realize strong field enhancements at higher frequencies, by managing the metal thickness of the nanoslots. We show that as the nanoslots become as thin as 10 nm, they show a giant electric field enhancement of up to 7600. Moreover, the resonances are strongly blue-shifted to above 1 THz from 0.33 THz. Our work provides a novel route to achieving high field enhancements at desired frequencies, as well as a means by which to characterize the slot as the gap-sensitive or substrate-sensitive type

Abstract-Colossal Terahertz Field Enhancement using Split-Ring Resonators with a Sub-10 nm Gap

Nayeon Kim, Sungjun In, Dukhyung Lee, Jiyeah Rhie, Jeeyoon Jeong, Dai-Sik Kim, Namkyoo Park


http://pubs.acs.org/doi/abs/10.1021/acsphotonics.7b00627?mi=aayia761&af=R&AllField=nano&target=default&targetTab=std

Terahertz (THz) nanogap structures have emerged as versatile platforms for THz science and applications by virtue of their strong in-gap field enhancements and accompanying high levels of sensitivity to gap environments. However, despite their potential, reliable fabrication methods by which to create THz structures with sub-10 nm gaps remain limited. In this work, we fabricated THz split-ring resonator (SRR) arrays featuring a sub-10 nm split gap. Our fabrication method, involving photolithography, argon ion milling, and atomic layer deposition, is a high-throughput technique which is also applicable to the fabrication of other THz structures with sub-10 nm gaps. Through THz-time domain spectroscopy and a numerical simulation, we identified the fundamental magnetic resonances of the nanogap SRRs, at which the electric field enhancement factor is experimentally estimated to be around 7000. This substantial field enhancement makes SRRs with a sub-10 nm gap suitable for the study of high-field phenomena and related applications.