Abstract-Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

F. Sizov¹, V. Zabudsky¹, S. Dvoretskii², V. Petryakov¹, A. Golenkov¹, K. Andreyeva¹ and Z. Tsybrii¹
 HIDE AFFILIATIONS
1 Institute of Semiconductor Physics, 03028 Kiev, Ukraine
2 Institute of Semiconductor Physics of SB RAS, 630090 Novosibirsk, Russia
http://scitation.aip.org/content/aip/journal/apl/106/8/10.1063/1.4913590
Appl. Phys. Lett. 106, 082104 (2015); http://dx.doi.org/10.1063/1.4913590

In this paper, issues associated with the development of infrared (IR) and terahertz (THz)radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IRphotoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP300 K ≈ 4.5 × 10⁻¹⁰ W/Hz^1/2 and NEP78 K ≈ 5 × 10⁻⁹ W/Hz^1/2. The samedetector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

Abstract-Uncooled THz/sub-THz Rectifying Detectors: FET vs. SBD

• M. Sakhno, 
• F. Sizov, 
• A. Golenkov

• http://link.springer.com/article/10.1007%2Fs10762-013-0023-2

The parameters (responsivity R and noise equivalent power (NEP)) of long channel unbiased (zero drain-source bias (V _DS = 0)) silicon field effect transistors (FET) as THz/sub-THz detectors with account of some parasitics were considered. These parameters and their radiation frequency ν dependences are compared with those of contemporary Schottky barrier diode (SBD) THz/sub-THz detectors. To describe and compare the known experimental data for both of detectors similar models, taking into account the parasitics (some FET or SBD resistances and capacities), were used. It is shown that taking into account the parasitics and detector-antenna impedance matching one can describe Si FET detector parameters and estimate the performance limits of such detectors. The R and NEP radiation frequency νdependences are similar for FET and SBD detectors and are proportional to ν ^-2 or to ν ^-4. The model used for SBD detectors describes well the known experimental data for optical NEP ^opt but for Si FET ones the sufficient scatter in experimental data is observed. The reason of it seems is mainly due to non-optimized technologies for FETs as detectors for THz/sub-THz radiation.