Bin Liu, Jingyu Liu, Hongyu Ji, Wei Wang, Jingling Shen, and Bo Zhang
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| (a) Schematic of the terahertz time-domain spectroscopy (THz-TDS) system and structure of the electrically-erasable rewritable THz device. (b) Scanning electron microscopy (SEM) images of the indium oxide sample. |
A terahertz (THz) nonvolatile in situ electrically erasable-rewritable photo-memory based on indium oxide (In2O3) nanoparticles is reported. The In2O3/PEDOT:PSS/quartz sample increases its conductivity and attenuates its THz transmission under optical excitation. When this optical excitation is terminated, the modulated THz transmission recovers to its original value in an air environment slightly. The modulated THz transmission recovered more rapidly with increasing bias voltage. Nonvolatile digital information storage is enabled when the In2O3/PEDOT:PSS/quartz structure is encapsulated in nitrogen. The photo-memory can be rewritten after in situ electrical erasure. The results show that in situ electrically erasable terahertz nonvolatile rewritable photo-memories are feasible.
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