Tuesday, July 16, 2019

Abstract-Charge carrier dynamics of FeSe thin film investigated by terahertz magneto-optical spectroscopy



Naotaka Yoshikawa, Masayuki Takayama, Naoki Shikama, Tomoya Ishikawa, Fuyuki Nabeshima, Atsutaka Maeda, and Ryo Shimano

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We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by a two-carrier Drude model, from which the carrier densities, scattering times, and effective masses of electron and hole carriers are determined in a wide range of temperature. The hole density decreases below the structural transition temperature while electron density increases, which is attributed to the band-structure modification in the electronic nematic phase. The scattering time of the hole carrier becomes substantially longer than that of the electron at lower temperature, which accounts for the increase of the positive dc Hall coefficient at low temperature.
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