Yu-Lian He, Jing-Bo Liu, Tian-Long Wen, Qing-Hui Yang, Zheng Feng, Wei Tan, Xue-Song Li, Qi-Ye Wen, Huai-Wu Zhang
https://iopscience.iop.org/article/10.1088/2053-1591/aadeca
Graphene field-effect-transistor (GFET) based terahertz (THz) modulators usually possess an unfulfilling modulation depth (MD) of 15% ~ 20%. In this work we developed a flexible GFET based THz modulator, where the graphene monolayer is coated with an organic high-K dielectric as the screening layer and an ion-gel layer as the gate. With this exquisite composite modulating structure, the new device possesses a significantly enhanced modulation depth (MD) up to 70% over a broad frequency band, an extremely low insert loss (IL) of 1.3 dB, and unexpected good structural and properties stability. The large intrinsic MD, low IL, as well as its flexibility, render this performance enhanced modulator versatile in fabrication of novel THz devices, such as multi-level modulator, for nonplanar or wearable applications.
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