Tuesday, September 25, 2018

Abstract-Silicon–plasmonic integrated circuits for terahertz signal generation and coherent detection


T. Harter, S. Muehlbrandt, S. Ummethala, A. Schmid, S. Nellen, L. Hahn, W. Freude,  C. Koos,

https://www.nature.com/articles/s41566-018-0237-x

Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the terahertz range (so-called T-waves). However, fabrication of the underlying devices still relies on complex processes using dedicated III–V semiconductor substrates. This severely restricts the application potential of current T-wave transmitters and receivers and impedes co-integration of these devices with advanced photonic signal processing circuits. Here, we demonstrate that these limitations can be overcome by plasmonic internal-photoemission detectors (PIPEDs). PIPEDs can be realized on the silicon photonic platform, which allows exploiting the enormous opportunities of the associated device portfolio. In our experiments, we demonstrate both T-wave signal generation and coherent detection at frequencies up to 1 THz. To prove the viability of our concept, we monolithically integrate PIPED transmitters and receivers on a common silicon chip and use them to measure the complex transfer impedance of an integrated T-wave device.

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