Abstract-Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, G. Boissier, M. Marcinkiewicz, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, V. I. Gavrilenko, C. Consejo, W. Desrat, B. Jouault, W. Knap, E. Tournié, and F. Teppe

https://journals.aps.org/prb/accepted/95079Oa7D2d1623e752d64e9057de647e3bf908f7

We report on temperature-dependent terahertz spectroscopy of three-layer InAs/GaSb/InAs quantum well (QW) with inverted band structure. The inter-band optical transitions, measured up to 16~T at different temperatures by Landau level magnetospectroscopy, demonstrate the inverted band structure of the QW. The terahertz photoluminescence at different temperatures allows us directly extracting the optical gap in the vicinity of the $\Gamma$ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature-independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers.