K. Uchida, T. Otobe, T. Mochizuki, C. Kim, M. Yoshita, K. Tanaka, H. Akiyama, L. N. Pfeiffer, K. W. West, and H. Hirori
https://journals.aps.org/prb/accepted/43076O14Z2210330d36f6038100d0aa224fae6d98
Strong interaction of terahertz (THz) waves with excitons induces nonperturtbative optical effects such as Rabi splitting and high-order sideband generation. Here, we investigated coherent properties of THz-induced sideband emissions from GaAs/AlGaAs multi-quantum-wells, and determined the optical susceptibility of the THz dressed exciton in the nonperturbative regime. The strong dependences of both amplitude and phase of the second-order sideband emission on the THz electric field strength imply that the field ionization of the 1s exciton modifies the THz-dressed exciton's energy spectrum.
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