Abstract-Voltage control of antiferromagnetic phases at near-terahertz frequencies

Anthony Barra, John Domann, Ki Wook Kim, and Greg Carman

https://journals.aps.org/prapplied/accepted/0b07aY81Sbe19d6ba4cf129961eff87b3d0982e65

A method to control antiferromagnetism using voltage-induced strain was proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy was shown to provide sufficient torque to switch an antiferromagnetic domain 90, either from out-of-plane to in-plane, or between in-plane axes.Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80 nm FeMn disk at frequencies approaching 1 THz, but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to switch the FeMn structure was only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.