Friday, December 15, 2017

Abstract-Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor


G. Tamamushi,  T. Watanabe,  J. Mitsushio,  A. A. Dubinov,  A. Satou, T. Suemitsu,  M. Ryzhii,  V. Ryzhii,  T. Otsuji

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10111/1011126/Current-injection-terahertz-lasing-in-a-distributed-feedback-dual-gate/10.1117/12.2249983.pdf?SSO=1

This paper reviews recent advancement on the research toward graphene-based terahertz (THz) lasers. Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the THz spectral range, which may lead to new types of THz lasers. A forward-biased graphene structure with a lateral p-i-n junction was implemented in a distributed-feedback (DFB) dual-gate graphene-channel FET and observed a single mode emission at 5.2 THz at 100K. The observed spectral linewidth fairly agrees with the modal gain analysis based on DFB-Fabry-Perrot hybrid-cavitymode modeling. Although the results obtained are still preliminary level, the observed emission could be interpreted as THz lasing in population-inverted graphene by carrier-injection.


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