Wednesday, May 17, 2017

Abstract-GaN Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics

Habibe Durmaz, Denis Nothern, Gordie Brummer, Theodore D. Moustakas, and Roberto Paiella

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a semi-polar GaN substrate, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption.
© 2017 OSA

No comments: