(Submitted on 9 Mar 2017)
http://search.arxiv.org:8081/paper.jsp?r=1703.03128&qid=1494538993967ler_nCnN_318394178&qs=terahertz
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors. Here we report such detectors based on AlGaN/GaN two-dimensional electron gas at 77~K are able to sense broadband and incoherent terahertz radiation. The measured photocurrent as a function of the gate voltage agrees well with the self-mixing model and the spectral response is mainly determined by the antenna. A Fourier-transform spectrometer equipped with detectors designed for 340, 650 and 900~GHz bands allows for terahertz spectroscopy in a frequency range from 0.1 to 2.0~THz. The 900~GHz detector at 77~K offers an optical sensitivity about $1~\mathrm{pW/\sqrt{Hz}}$ being comparable to a commercial silicon bolometer at 4.2~K. By further improving the sensitivity, room-temperature detectors would find applications in active/passive terahertz imaging and terahertz spectroscopy.
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