Tuesday, May 17, 2016
Abstract-Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures
Terahertz intersubband are developed based on GaN/AlGaN on a free-standing semi-polar substrate. These are nearly free of the polarization-induced internal that severely complicate the design of nitride intersubband devices on traditional c-plane substrates. As a result, a promising bound-to-quasi-bound THz design can be implemented. Pronounced peaks at the design frequency near 10 THz are measured, covering frequencies that are fundamentally inaccessible to existing arsenide intersubband devices due to reststrahlen absorption. This materials system provides a favorable platform to utilize the intrinsic advantages of nitride semiconductors for THz optoelectronics.