Monday, May 30, 2016
Abstract-A 200 GHz CVD Graphene FET Based Resistive Subharmonic Mixer
Yaxin Zhang ; Michael Andersson ; Jan Stake
We report on the design and characterization of a 200 GHz resistive subharmonic mixer based on a single, multichannel CVD graphene field effect transistor (G-FET). The device has gate length 0.5 µm and width 2x40 µm. The integrated mixer circuit is implemented in coplanar waveguide (CPW) technology and realized on a 100 µm thick high resistive silicon substrate. The measured mixer conversion loss (CL) is 34 +- 3 dB across 190-210 GHz band with 10 dBm local oscillator (LO) pumping power and the overall minimum CL gives 31.5 dB at 190 GHz.