Monday, February 15, 2016

Abstract-Optimization of the epitaxial design of high current density resonant tunneling diodes for terahertz emitters

Razvan BabaRichard A. Hogg
Univ. of Glasgow (United Kingdom)
Benjamin J. Stevens
The Univ. of Sheffield (United Kingdom)
Toshikazu Mukai
Rohm Co., Ltd. (Japan)
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97552W (February 13, 2016); doi:10.1117/12.2212346

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints. 
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