Thursday, January 7, 2016

Abstract-Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction

Dominique Coquillat, Jacek Marczewski, Pawel Kopyt, Nina Dyakonova, Benoit Giffard, and Wojciech Knap

Phenomena of the radiation coupling to the field effect transistors based terahertz (THz) detectors are studied. We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, is coupled to an antenna substrate leading to responsivity losses and/or cross-talk effects in the field effect based THz detector arrays. Experimental and theoretical investigations of the responsivity versus substrate thickness are performed. They clearly show how to minimize the losses by the detector/ array substrate thinning. In conclusion simple quantitative rules of losses minimization by choosing a proper substrate thickness of field effect transistor THz detectors are presented for common materials (Si, GaAs, InP, GaN) used in semiconductor technologies.
© 2016 Optical Society of America
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