Friday, December 18, 2015

Abstract-Two-Terminal Graphene Oxide Devices for Electrical Modulation of Broadband Terahertz Waves

  1. Seungwoo Lee1,*
  2. Kyung Eun Lee2
  3. Won Jun Lee2
  4. Byung Cheol Park3
  5. Byungsoo Kang3
  6. Euyheon Hwang4,* and
  7. Sang Ouk Kim2,*
Article first published online: 16 DEC 2015
DOI: 10.1002/adom.201500577;jsessionid=7B118B09A2FC6E009805CF6701D21B98.f01t03?userIsAuthenticated=false&deniedAccessCustomisedMessage=

Graphene oxide (GO) can provide a generic way to effectively control broadband THz transmission amplitude, when incorporated into two-terminal electrode devices. Electrically trapped charge carriers within localized impurity states (LIS) of GO, which originate from fully randomized defective structure of GO, result in a large modulation of transmission amplitude (≈30%) for broadband THz waves (≈0.3–2.0 THz) even at room temperature.

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