Thursday, October 15, 2015

Abstract-Terahertz studies of 2D and 3D topological transitions

Published under licence by IOP Publishing Ltd •

We report terahertz measurements on bulk HgCdTe crystals at the semiconductor- to-semimetal topological transition and InAs/GaSb inverted band structure quantum well. We show that physical parameters of these narrow gap systems driven in specific topological phases can be efficiently extracted by means of terahertz photoconductivity studies.

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