Wednesday, September 2, 2015

Abstract-Active terahertz device based on optically controlled organometal halide perovskite

An active all-optical high-efficiency broadband terahertz device based on an organometal halideperovskite (CHNHPbI, MAPbI)/inorganic (Si) structure is investigated. Spectrally broadband modulation of the THz transmission is obtained in the frequency range from 0.2 to 2.6 THz, and a modulation depth of nearly 100% can be achieved with a low-level photoexcitation power (∼0.4 W/cm2). Both THz transmission and reflection were suppressed in the MAPbI/Sistructure by an external continuous-wave (CW) laser. Enhancement of the charge carrier density at the MAPbI/Si interface is crucial for photo-induced absorption. The results show that the proposed high-efficiency broadband optically controlled terahertz device based on the MAPbI/Si structure has been realized.

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