Monday, August 24, 2015
Abstract-Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
We report on the observation of a helicity sensitive excited by terahertz (THz) in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP For a circular the current measured between source and drain contacts changes its sign with the inversion of the helicity. For elliptically polarized the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual the can be defined either by the Stokes parameter defining the helicity or those for linear We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by exhibit a caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG for all-electric of the state.