X. J. Zhou, J. Yuan, H. Wu, Z. S. Gao, M. Ji, D. Y. An, Y. Huang, F. Rudau, R. Wieland, B. Gross, N. Kinev, J. Li, A. Ishii, T. Hatano, V. P. Koshelets, D. Koelle, R. Kleiner, H. B. Wang, and P. H. Wu
Phys. Rev. Applied 3, 044012 – Published 21 April 2015
http://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.3.044012
We report on tuning the THz emission of a Bi2Sr2CaCu2O8 (BSCCO) intrinsic Josephson-junction stack by a focused laser beam which is scanned across the stack. The emission power Pe increases by up to 75% upon laser irradiation for a bath temperature near 22 K. The laser-induced changes in the voltage Vdc across the stack and in the emission power are measured simultaneously. The maximum of the laser-induced changes in emission power ΔPe is achieved by irradiating the stack on the location where the local temperature is about the critical temperature Tc . However, ΔPe is found to be proportional to the laser-induced global voltage change ΔVdc , irrespective of the laser position. This unexpected global response is likely to be related to a change in the average stack temperature and is consistent with the change in Pe when increasing the bath temperature by about 0.2 K. This tuning method can be employed in the application of BSCCO THz sources.
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