Abstract-High temperature terahertz response in a p-type quantum dot-in-well photodetector

Seyoum Wolde¹, Yan-Feng Lao¹, A. G. Unil Perera^1,a), Y. H. Zhang², T. M. Wang², J. O. Kim³, Ted Schuler-Sandy³, Zhao-Bing Tian³ and S. Krishna³
 HIDE AFFILIATIONS
1 Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
2 Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
3 Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106, USA

http://scitation.aip.org/content/aip/journal/apl/105/15/10.1063/1.4898088?TRACK=RSS

Terahertz (THz) response observed in a p-type InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while strong THz responses up to ∼4.28 THz is observed at higher temperatures (∼100–130 K). Responsivity and specific detectivity at 9.2 THz (32.6 μm) under applied bias of −0.4 V at 130 K are ∼0.3 mA/W and ∼1.4 × 10⁶ Jones, respectively. Our results demonstrate the potential use of p-type DWELL in developing high operating temperature THz devices.