Abstract-Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1− x Mg x O2 semiconductor films

X. R. Li (李旭瑞)¹, M. J. Han (韩美杰)¹, P. Chang (常平)¹, Z. G. Hu (胡志高)^1,a),
Y. W. Li (李亚巍)¹, Z. Q. Zhu (朱自强)¹ and J. H. Chu (褚君浩)¹

1 Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
a) Author to whom correspondence should be addressed. Electronic mail: zghu@ee.ecnu.edu.cn. Tel.: +86-21-54345150. Fax: +86-21-54345119.
Appl. Phys. Lett. 104, 012103 (2014); http://dx.doi.org/10.1063/1.4860994

http://scitation.aip.org/content/aip/journal/apl/104/1/10.1063/1.4860994

Terahertz reflectance spectra and electrical transport of CuCr1− x Mg x O2 films have been studied in temperature range of 150–300 K. With increasing temperature, the phonon mode near 15 THz shows a redshift trend, and free carrier absorption below 6 THz becomes more prominent. Moreover, hole effective mass increases linearly from 0.028 to 0.48 m 0 with the temperature and composition. Hall coefficient shows a turning-point at about 220, 206, and 194 K for the composition of x = 0.02, 0.06, and 0.10, respectively. The phenomena can be attributed to the transition of carrier transport mechanism from a thermal activation behavior to a variable range-hopping one.

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