Nano Lett., Just Accepted Manuscript
DOI: 10.1021/nl402436g
Publication Date (Web): November 8, 2013
Copyright © 2013 American Chemical Society
Plasmonic effects have proven to be very efficient in coupling light to structures much smaller than its wavelength. Efficient coupling is particularly important for the infrared or terahertz (λ ~ 0.3 mm) region where semiconductor structures and devices may be orders of magnitude smaller than the wavelength and this can be achieved through nanostructures that have a desired plasmonic response. We report and demonstrate a self-assembly method of embedding controllable semimetallic nanostructures in a semiconducting matrix in a ErSb:GaSb material system grown by molecular beam epitaxy. The plasmonic properties of the ErSb:GaSb are characterized and quantified by three polarization-resolved spectroscopy techniques, spanning more than three orders of magnitude in frequency from 100 GHz up to 300 THz. Surface plasmons cause the semimetallic nanostructures to resonate near 100 THz (3 µm wavelength), indicating the semimetal as a potential infrared plasmonic material. The highly conductive ErSb nanowires polarize electromagnetic radiation in a broad range from 0.2 up to ~100 THz, providing a new platform for electromagnetics in the infrared and terahertz frequency ranges.
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