Abstract-Intrinsic terahertz plasmon signatures in chemical vapour deposited graphene

Shruti Badhwar¹, Juraj Sibik², Piran R. Kidambi³, Harvey E. Beere¹, J. Axel Zeitler³, Stephan Hofmann³, and David A. Ritchie¹

¹Department of Physics, University of Cambridge, Cambridge CB30HE, United Kingdom
²Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB23RA, United Kingdom
³Department of Engineering, University of Cambridge, Cambridge CB30FA, United Kingdom 

http://apl.aip.org/resource/1/applab/v103/i12/p121110_s1?isAuthorized=no

Plasmonic resonance at terahertz (THz) frequencies can be achieved by gating graphene grown via chemical vapour deposition (CVD) to a high carrier concentration. THz time domain spectroscopy of such gated monolayer graphene shows resonance features around 1.6 THz, which appear as absorption peaks when the graphene is electrostatically p-doped and change to enhanced transmission when the graphene is n-doped. Superimposed on the Drude-like frequency response of graphene, these resonance features are related to the inherent poly-crystallinity of CVD graphene. An understanding of these features is necessary for the development of future THz optical elements based on CVD graphene.

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