Abstract-Modeling of Field Effect Transistor Channel as a Nonlinear Transmission Line for Terahertz Detection

• Nihal Y. Ibrahim, 
• Nadia H. Rafat, 
• Salah E. A. Elnahwy

http://link.springer.com/article/10.1007%2Fs10762-013-0009-0

This paper revisits the theory of operation of field effect transistor in the extremely high frequency scale, where the analysis has gone beyond the conventional cutoff frequency of the transistor. In this range, which is typically the terahertz (THz) and sub-terahertz range, the transistor blocks the high frequency signal and generates a rectified signal related to the input high frequency signal. An analytical model is derived for the channel of the FET in the linear mode of operation in non-resonant THz detection conditions. A transmission line distributed circuit model is applied. This is, from the authors’ point of view, the suitable model for high frequency non-quasi static operation and the characteristic parameters of this model are derived from the differential equation governing the electron gas in the channel. A comparison is presented for the calculated photoresponse with previously published experimental one showing good agreement away from the threshold potential. Finally, the effects of coupling between the present model and the external input circuit have been taken into account including the loading effects of the antenna and a discussion is given for the effect on frequency selectivity of the FET.