Barmak Heshmat , Hamid Pahlevaninezhad , Yuanjie Pang , Mostafa Masnadi Shirazi , Ryan B. Lewis , Thomas Tiedje , Reuven Gordon , and Thomas E. Darcie
http://pubs.acs.org/doi/abs/10.1021/nl303314a
Low-temperature (LT) grown GaAs has a sub-picosecond carrier response time that makes it favorable for terahertz photoconductive (PC) switching. However, this is obtained at the price of lower mobility and lower thermal conductivity than GaAs. Here we demonstrate sub-picosecond carrier sweep-out and over an order of magnitude higher sensitivity in detection from a GaAs-based PC switch by using a nanoplasmonic structure. As compared to a conventional GaAs PC switch, we observe 40 times the peak-to-peak response from the nanoplasmonic structure on GaAs. The response is double that of a commercial, antireflection coated LT-GaAs PC switch.
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