Thursday, May 5, 2016
Abstract-Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
We explore the effects of surfactant-mediated on the structural, electrical, and optical properties of fast metal-semiconductor photoconductors. Specifically, application of a flux during was found to significantly improve the properties of of LuAs embedded in InGaAs. These improvements are attributed to the enhanced structural quality of the overgrown over the LuAs The use of enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the overgrowth degraded. Dark increased by up to ∼15× while carrier mobility remained over 2300 cm/V-s and were reduced by >2× at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.