The electron impact ionization dynamic has been investigated by Monte Carlo method in n-type InSb under the action of single-cycle pulses with 1 ps duration. The threshold electric field of impact ionization has been estimated to be about 8 kV/cm at 80 K. The number of generated carriers increases rapidly with increasing of electric field strength over threshold, and at 100 kV/cm, normalized electron concentration reaches 14. It is found that impact ionization process is dominant energy loss mechanism for hot carriers with energy larger than threshold energy of impact ionization. The results of calculations are compared with available experimental data. The agreement between theoretical calculations and experimental results was obtained.
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