Abstract-Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Greg Cywinski, Piotr Kruszewski, I. Yahniuk, S. L. Rumyantsev

https://www.researchgate.net/publication/324049558_Electrically_controlled_wire-channel_GaNAlGaN_transistor_for_terahertz_plasma_applications

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Abstract-Performance Limits for Field Effect Transistors as Terahertz Detectors

V. Yu. Kachorovskii, S. L. Rumyantsev, W. Knap, M. Shur
http://arxiv.org/abs/1302.7089

We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. We also calculate the conversion efficiency Q of the device defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power. We show that Q has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%