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Thursday, August 4, 2016
Abstract-Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ∼20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.