A repository & source of cutting edge news about emerging terahertz technology, it's commercialization & innovations in scanners, quality control, process control, medical diagnostics, security, astronomy,communications, graphene, metamaterials, CMOS, compressive sensing,3d printing, and the Internet of Everything. NOTHING POSTED IS INVESTMENT ADVICE! REPOSTED COPYRIGHT IS FOR EDUCATIONAL USE. I am a private investor in THz.
Thursday, August 4, 2016
Abstract-Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ∼20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.